| PART |
Description |
Maker |
| AT28HC256-12DM_883 AT28HC256-12FM_883 AT28HC256-12 |
From old datasheet system
256 (32K x 8) High Speed CMOS
256 32K X 8 HIGH SPEED PARALLEL EEPROMS
256 32K x 8 High Speed CMOS E2PROM
|
ATMEL[ATMEL Corporation]
|
| W24257AJ-8N W24L257AJ-8A |
32K X 8 High Speed CMOS Static RAM 32K X 8 STANDARD SRAM, 8 ns, PDSO28
32K×8 High-Speed CMOS Static RAM(32K×8位高速CMOS静态RAM)
|
Winbond Electronics, Corp.
Winbond Electronics Corp
|
| WS57C256F WS57C256F-35 WS57C256F-35C WS57C256F-35D |
-WS57C256F MILITARY HIGH SPEED 32K X 8 CMOS EPROM
32K X 8 OTPROM, 55 ns, PDIP28
HIGH SPEED 32K x 8 CMOS EPROM 高2K的8的CMOS存储
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| IDT70V07L55G IDT70V07S55G IDT70V07L55PF |
400V N-Channel MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 32K X 8 DUAL-PORT SRAM, 55 ns, CPGA68
HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM 32K X 8 DUAL-PORT SRAM, 55 ns, CPGA68
HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM 32K X 8 DUAL-PORT SRAM, 55 ns, PQFP80
|
Integrated Device Technology, Inc.
|
| AT27LV256A AT27LV256A-12 AT27LV256A-12JC AT27LV256 |
High Speed CMOS Logic 14-Stage Binary Counter with Oscillator 16-SOIC -55 to 125 32K X 8 OTPROM, 70 ns, PQCC32
256K 32K x 8 Low Voltage OTP CMOS EPROM 32K X 8 OTPROM, 90 ns, PDSO28
High Speed CMOS Logic 14-Stage Binary Counter with Oscillator 16-TSSOP -55 to 125 32K X 8 OTPROM, 90 ns, PDSO28
High Speed CMOS Logic 14-Stage Binary Counter with Oscillator 16-SOIC -55 to 125 32K X 8 OTPROM, 150 ns, PDSO28
High Speed CMOS Logic CMOS Programmable Divide-by-N Counter 24-SOIC -55 to 125 32K X 8 OTPROM, 120 ns, PDSO28
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| IDT70V7288S_L 70V7288_DS_34523 IDT70V7288L15PF IDT |
64K x 16 Asynchronous Bank-Switchable Dual-Port SRAM
From old datasheet system
HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS
|
IDT[Integrated Device Technology]
|
| AT28HC256F-12UM_883 AT28HC256F-90FM_883 AT28HC256E |
256 (32K x 8) High-speed Parallel EEPROM
32K X 8 EEPROM 5V, 90 ns, PQCC32 PLASTIC, MS-016AE, LCC-32
70NS, TSOP, IND TEMP(EEPROM) 32K X 8 EEPROM 5V, 70 ns, PDSO28
70NS, PLCC, IND TEMP, GREEN PKG(EEPROM) 32K X 8 EEPROM 5V, 70 ns, PQCC32
90NS, PDIP, IND TEMP, GREEN(EEPROM) 32K X 8 EEPROM 5V, 90 ns, PDIP28
120NS, SOIC, IND TEMP, GREEN(EEPROM) 32K X 8 EEPROM 5V, 120 ns, PDSO28
|
ATMEL Corporation
Atmel, Corp.
ATM Electronic, Corp.
|
| 709179L12PF IDT709179L 709179L12PFI 709179L7PF 709 |
32K x 9 Sync, Dual-Port SRAM, PipeLined/Flow-Through
HIGH-SPEED 32K X 9 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM 32K X 9 DUAL-PORT SRAM, 9 ns, PQFP100
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| CXK5T8257BTM/BYM/BM-12LLX CXK5T8257BTM/BYM/BM-10LL |
32K X 8 STANDARD SRAM, 100 ns, PDSO28
32K X 8 STANDARD SRAM, 120 ns, PDSO28
32768-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
| IDT70V7339S IDT70V7339S133BC IDT70V7339S133BCI IDT |
HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
|
IDT[Integrated Device Technology]
|
